By Evgeni Gusev

ISBN-10: 1402043651

ISBN-13: 9781402043659

ISBN-10: 140204366X

ISBN-13: 9781402043666

The aim of this NATO complex study Workshop (ARW) entitled “Defects in complicated High-k Dielectric Nano-electronic Semiconductor Devices”, which used to be held in St. Petersburg, Russia, from July eleven to fourteen, 2005, was once to check the very advanced clinical matters that pertain to using complex excessive dielectric consistent (high-k) fabrics in subsequent iteration semiconductor units. The distinct characteristic of this workshop used to be specialise in a massive factor of defects during this novel type of fabrics. one of many key stumbling blocks to high-k integration into Si nano-technology are the digital defects in high-k fabrics. it's been validated that defects do exist in high-k dielectrics and so they play an enormous position in machine operation. although, little or no is understood in regards to the nature of the defects or approximately attainable strategies to dispose of, or no less than reduce them. Given the absence of a possible substitute within the close to destiny, well-focused medical study and competitive improvement courses on high-k gate dielectrics and comparable units needs to proceed for semiconductor electronics to stay a aggressive source of revenue generating strength within the worldwide market.

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Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices: 220 (Nato Science Series II:) by Evgeni Gusev


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