By Hoang-Phuong Phan

ISBN-10: 331955543X

ISBN-13: 9783319555430

This publication addresses the piezoresistance in p-type 3C-SiC, which it investigates utilizing experimental characterization and theoretical research. The gauge issue, the piezoresistive coefficients in two-terminal and four-terminal resistors, the comparability among unmarried crystalline and nanocrystalline SiC, besides the temperature dependence of the piezoresistive impact in p-type 3C-SiC also are discussed. 
Silicon carbide (SiC) is a superb fabric for digital units working at excessive temperatures, due to its huge strength band hole, better mechanical houses and severe chemical inertness. one of the quite a few polytypes of SiC, the cubic unmarried crystal, that is additionally popular as 3C-SiC, is the main promising platform for microelectromechanical (MEMS) purposes, because it may be epitaxially grown on an Si substrate with diameters of as much as a number of hundred millimeters. this option makes 3C-SiC appropriate with the traditional Si-based micro/nano processing and in addition cuts down the price of SiC wafers. 
The research into the piezoresistive influence in 3C-SiC is of important curiosity for the improvement of mechanical transducers akin to strain sensors and pressure sensors used for controlling combustion and deep good drilling. even though a couple of experiences have concerned about the piezoresistive impact in n-type 3C-SiC, 4H-SiC and 6H-SiC, relatively little consciousness has been paid to piezoresistance in p-type 3C-SiC. 
In addition, the e-book investigates the piezoresistive influence of top-down fabricated SiC nanowires, revealing a excessive measure of sensitivity in nanowires applying an cutting edge nano strain-amplifier. the massive gauge components of the p-type 3C-SiC at either room temperature and excessive temperatures chanced on right here point out that this polytype should be appropriate for the advance of mechanical sensing units working in harsh environments with excessive temperatures.

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Piezoresistive Effect of p-Type Single Crystalline 3C-SiC: Silicon Carbide Mechanical Sensors for Harsh Environments (Springer Theses) by Hoang-Phuong Phan


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